摘要 |
When a gate-turn-off silicon controlled rectifier (GTO) is turned on, the potential of its gate electrode rises toward the voltage at its anode electrode. This gate voltage is employed to turn on a second GTO to insure that the loads driven by these GTO's are energized in a particular order. Switches in the circuit permit the GTO's to be turned off concurrently or in any order desired. A charge storage circuit may be included for controlling the turn-on delay between the two GTO's.
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