| 发明名称 |
GASEOUS PHASE GROWING DEVICE OF IIIIV GROUP SOMPOUND SEMICONDUCTOR |
| 摘要 |
PURPOSE:To get stable source reaction by supplying bubbling mixed gas of source gas of V group element and H2 from lower part of III group element put in the upper part of screen wit small pores. |
| 申请公布号 |
JPS5256856(A) |
申请公布日期 |
1977.05.10 |
| 申请号 |
JP19750133500 |
申请日期 |
1975.11.05 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
TERAO HIROSHI;ARAI KENICHI |
| 分类号 |
C30B25/14;C23C16/448;C30B29/40;H01L21/205 |
主分类号 |
C30B25/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
