| 摘要 |
A method of producing thin film devices of vanadium oxide material consists in reactively sputtering onto a suitable substrate thin films made of a major amount of a vanadium oxide material having a transition temperature of fixed value and a minor amount of a doping material permitting the raising or lowering of the transition temperature of the thin film device respectively above or below such fixed value. The doping material may be selected from the group consisting of tungsten, molybdenum, titanium, niobium, germanium, silicon and carbon. |
