发明名称 HIGHHSPEED CARRY CIRCUIT
摘要 PURPOSE:Using the serial circuit of dual FET and dual gate type Gunn effect element, the paired circuit which is capable of performing logic (X.Y+C.W)is prepared in plural stages. Thus, a high-speed carry circuit of processing speed of about 40Ps per stage of the paired circuit can be obtained.
申请公布号 JPS5255344(A) 申请公布日期 1977.05.06
申请号 JP19750131224 申请日期 1975.10.30
申请人 FUJITSU LTD 发明人 NAKAMURA TETSUO;GOTOU GENSUKE
分类号 G06F7/48;G06F7/50;G06F7/501;G06F7/506 主分类号 G06F7/48
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