| 摘要 |
The specification discloses a symmetrical semiconductor switch having a semiconductor body formed from a plurality of layers of alternating conductivity types to form a plurality of P-N junctions. Regions of one conductivity type are formed in the outer layers of the opposite conductivity type. Three electrodes contact the outer layers and the regions of the body to form a symmetrical semiconductor switch. Structure is provided on the outer layers of the body in order to degrade the lifetime of carriers which tend to move laterally across the switch in order to improve the switching time of the switch. In one embodiment, the structure comprises grooves formed in the outer layers of the body, the grooves being of sufficient width in order to substantially degrade the lifetime of carriers attempting to pass through layers adjacent the grooves. In another embodiment of the invention, carrier lifetime degrading material such as gold-doped glass is introduced into the body.
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