Information storage circuit employing MNOS transistors

摘要

An MNOS transistor for electric information storage circuits includes one channel and has a layered gate insulator. A plurality of such MNOS transistors are arranged in a matrix on the substrate and the start voltage is variably dependent upon the electric charge stored in the gate insulator of each transistor. The channel length of the MNOS transistor is shorter than twice the depletion layer thickness during recording or erasure of data, and during recording of data and during read-out and erasure of data only voltages of the same polarity are applied between the gate, source, and drain electrodes and the common substrate.