| 发明名称 |
Method of forming thin film resistor |
| 摘要 |
A process is disclosed for vacuum depositing by co-sputtering a thin film nickel-chromium resistor of metastable composition. Also disclosed is a resistor made by this process, which resistor possesses a near zero temperature coefficient of resistance.
|
| 申请公布号 |
US4021277(A) |
申请公布日期 |
1977.05.03 |
| 申请号 |
US19720313065 |
申请日期 |
1972.12.07 |
| 申请人 |
SPRAGUE ELECTRIC COMPANY |
发明人 |
SHIRN, GEORGE A.;PFISTER, WILLIAM J. |
| 分类号 |
C23C14/00;(IPC1-7):C23F1/02 |
主分类号 |
C23C14/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
