SEMICONDUCTOR DEVICE MANUFACTURE

摘要

A method of manufacturing a semiconductor device wherein a semiconductor layer of one conductivity type is provided on a semiconductor body of the same conductivity type but of higher conductivity, a mesa is formed by etching away with a reactive gas plasma the semiconductor material around a masked area defining a mesa, and the mesa is then undercut by further etching by a gas plasma that removes material of the body faster than material of the layer so as to produce a bevelled mesa.