Gate with steep transfer characteristics - has reference voltage coupled to input transistor emitter via diode or diode and resistor

摘要

The TTL or DTL gate can be readily integrated and consists of a diode connected between the input transistor emitter and the reference potential (e. g. OV). The diode may be replaced by a diode network, or by a diode in series with a resistor. Alternatively, instead of a discrete resistor the resistance of the diode itself may be employed. The diode may be a Schottky barrier type. The advantage lies in the gate having steep transfer characteristics.