| 发明名称 |
METHOD FOR GROWTH OF *GAAL*AS CRYSTAL |
| 摘要 |
<p>PURPOSE:To grow (GaAl)As crystal, which is uniform in chemical composition and is good in crystallinity, on crystalline GaAs substrate under specified cooling rate.</p> |
| 申请公布号 |
JPS5249999(A) |
申请公布日期 |
1977.04.21 |
| 申请号 |
JP19750125605 |
申请日期 |
1975.10.17 |
| 申请人 |
SHARP KK |
发明人 |
YAMAMOTO SABUROU;YANO MORICHIKA;KURATA YUKIO;KOMURO AKIRA;MATSUI KANEKI |
| 分类号 |
H05B33/10;C30B29/40;H01L33/30;H05B33/14 |
主分类号 |
H05B33/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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