| 摘要 |
PURPOSE:To form a desired pattern accurately by forming a pattern which is in reverse relation to the desired pattern by using an optical absorbing material, by forming a layer composed of a photosensitive material thereon, and by carrying out exposure. CONSTITUTION:A positive resist is applied to a semiconductor substrate 1. After exposure is carried out through a photomask 3. development is performed; then, a positive resist pattern 5a is formed which is in reverse relation to a finally desired pattern. Then, a negative resist 2 is applied all over, the photomask 3 is registered to the positive resist pattern 5a and exposed again. At this time, ultraviolet ray 4 passes through the negative resist 2 and is reflected on the surface of the semiconductor substrate 1. A light 4a which is reflected to the side of a part 2a requiring no exposure is absorbed to the positive resist pattern 5a and does not reach the part 2a. Since the reflected light 4a is not irradiated to the part 2a, the part 2a can be removed accurately by development. The positive resist pattern 5a alone is removed to form a desired pattern of the negative resist 2. A material of positive resist may be used which can absorb other reflected light 4a. |
