发明名称 PROCESS FOR PRODUCTION OF COMPOUND SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:Thin pieces of compound crystal are used in an active part, and other materials are used in other parts, whereby volume production of inexpensive semiconductor devices of high mechanical strength is made possible.</p>
申请公布号 JPS5248987(A) 申请公布日期 1977.04.19
申请号 JP19750125053 申请日期 1975.10.17
申请人 FUJITSU LTD 发明人 KIYO HIDEO;TAKIGAWA HIROSHI;ITOU MAKOTO;TSUJINO YOSHINORI
分类号 H01L21/301;H01L21/00;H01L21/203;H01L31/0264;H01L31/08 主分类号 H01L21/301
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