发明名称 |
Electron emitting device and method of making the same |
摘要 |
A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.
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申请公布号 |
US4019082(A) |
申请公布日期 |
1977.04.19 |
申请号 |
US19750561353 |
申请日期 |
1975.03.24 |
申请人 |
RCA CORPORATION |
发明人 |
OLSEN, GREGORY HAMMOND;MARTINELLI, RAMON UBALDO;ETTENBERG, MICHAEL |
分类号 |
H01J1/32;H01J9/12;H01J31/50;H01J43/02;(IPC1-7):H01J1/14;H01J19/06 |
主分类号 |
H01J1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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