| 摘要 |
A method of manufacturing an electronic device, comprising a plurality of closely spaced conductive layers on a substrate, said method comprising the steps of depositing said substrate a layer of polycrystalline semiconductor material, providing at least one aperture defined in and extending through said polycrystalline layer, effecting a material treatment via an exposed edge of said polycrystalline layer in said aperture in the presence of a masking layer on said polycrystalline layer, said treatment being effected to convert a narrow strip portion of the polycrystalline layer of substantially uniform width and underlying the masking layer adjacent the aperture into material insoluble in an etchant specific for the untreated part of said polycrystalline layer, removing said masking layer and selectively removing, with the use of said etchant, the untreated polycrystalline semiconductor material to leave a narrow strip of material present on and raised above the substrate, and effecting a deposition of conductive material on the upper surface of said strip of material and on said substrate at least at opposite sides of said strip, said conductive material being deposited in a thickness less than the height of said strip above the substrate and a discontinuity in said deposited conductive material being formed at said strip. |
