| 发明名称 |
METHOD OF MOS CIRCUIT FABRICATION |
| 摘要 |
<p>An improved method of MOS circuit fabrication includes: formation of a region of first selected material on the surface of underlying material, removal of less than all of the first selected material from selected regions of the underlying material, formation of a layer of insulating material between the first selected material and the underlying material, conversion of the first selected material to a second selected material, and removal of the second selected material to expose selected regions of the underlying material. In one embodiment the first selected material is an oxide of boron, while the second selected material is an oxide of phosphorous.</p> |
| 申请公布号 |
CA1008973(A) |
申请公布日期 |
1977.04.19 |
| 申请号 |
CA19750222368 |
申请日期 |
1975.03.18 |
| 申请人 |
FAIRCHILD CAMERA AND INSTRUMENT CORPORATION |
发明人 |
LUCE, ROBERT L.;PERRY, JOSEPH P.;SANSBURY, JAMES D. |
| 分类号 |
H01L29/78;H01L21/28;H01L21/283;H01L21/306;H01L21/336;H01L21/768;H01L23/29;H01L23/485;H01L23/522;H01L29/00 |
主分类号 |
H01L29/78 |
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