| 摘要 |
PURPOSE:To improve especially the rate of temp. change in the permittivity and capacitance of a capacitor by forming the ceramic from a sintered body consisting essentially of SrTiO3 and CaTiO3, further contg. Nb2O5 and CuO and/or MnO2 and in which the grain boundary is formed by an insulating layer of the oxides contg. Bi, Nb and Cs. CONSTITUTION:The semiconductor porcelain is a sintered body contg. 100mols of the essential components consisting of 97-80mols of SrTiO3 and 3-20mols of CaTiO3, 0.05-0.40mols of Nb2O5 and 0.10-0.40mols of at least one kind from CuO and MnO2, and the grain boundary is formed by an insulating layer of the oxides contg. Bi, Nb and Cs. The semiconductor porcelain is obtained by the following process. Namely, a composition consisting of 20-90mols of Bi2O3, 2-8mols of Nb2O5 and 2-78mols of the carbonate or oxide of cesium is applied on the surface of a porcelain sintered body contg. 100mols of the essential component consisting of 97-80mols of SrTiO3 and 3-20mols of CaTiO3, 0.05-0.40mols of Nb2O5 and 0.10-0.40mols of at least one kind between CuO and MnO2, and then calcined. |
