| 摘要 |
<p>PURPOSE:To accurately detect non-volatile storage information by detecting non-volatile storage information by the read operation before the start of first write operation after power-on and deciding an external data output terminal. CONSTITUTION:A semiconductor memory consists of a non-volatile storage circuit 1, a changeover switch circuit 2 which switches an output MEMO of the non-volatile storage circuit 1 and a read signal read bus line RB for normal operation, an output circuit 3, and a changeover switch signal generating circuit 4 which controls the changeover switch 2. Information in the non-volatile storage circuit 2 is transmitted to a data output terminal or a data input/output terminal by the read operation before the start of first write operation after power-on, and normal write and read operations are performed after the first write operation. Thus, non-volatile storage information is accurately detected.</p> |
