| 摘要 |
1470285 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 5 Sept 1975 [25 Nov 1974] 36719/75 Heading H1K In a method of ion implantation, which uses a photoresist mask, flowing of the photoresist during the implantation process is limited by prior removal of a 1000 Š thick surface layer of the mask by gas plasma oxidation. The resistance to flow is attributed to structural changes occurring close to the surface of the remainder of the mask during the gas plasma oxidation process.
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