发明名称 PROCESS FOR ATTACHING A LEAD MEMBER TO A SEMICONDUCTOR DEVICE AND PRODUCTS THEREOF
摘要 <p>A thermally and electrically conductive metal lead member is joined to the refractory metal contact member of a semiconductor device using a brazing alloy comprising on a weight basis about 80-89 percent copper, about 5-15 percent silver, and about 4-6 percent phosphorus. The contact member/semiconductor joint may be formed in an inert atmosphere at the same time and at the same temperature as the contact member/lead member joint.</p>
申请公布号 CA1008566(A) 申请公布日期 1977.04.12
申请号 CA19750217950 申请日期 1975.01.15
申请人 GENERAL INSTRUMENT CORPORATION 发明人 GOLDBERG, MONROE B.;VOORHIS, WILLIAM B.
分类号 B23K35/30;H01L21/60;H01L23/051;H01L23/31;H01L23/48;H01L23/488;H01L23/492 主分类号 B23K35/30
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