发明名称 |
Intermetallic compound layer in thin films for improved electromigration resistance |
摘要 |
A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200 DEG C and 525 DEG C for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6x10<->4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.
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申请公布号 |
US4017890(A) |
申请公布日期 |
1977.04.12 |
申请号 |
US19750625439 |
申请日期 |
1975.10.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOWARD, JAMES KENT;HO, PAUL SIU-CHUNG |
分类号 |
G11C11/14;A01K1/01;B41J2/335;C22C21/00;C23C14/00;C23C14/16;C23C14/58;G11B5/31;H01B1/02;H01F10/06;H01L21/28;H01L21/3205;H01L23/52;H01L23/532;H01L29/43;H05K1/09;(IPC1-7):H01L23/48;H01L29/46;H01L29/62;H01L29/64 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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