| 摘要 |
PURPOSE:To eliminate the restriction that they dummy cell capacity should be half a memory cell capacity, and to adhieve a memory with high circuit integration, through the selection of dummy word line at the same column side of selected word lines, in a dynamic memory. CONSTITUTION:A dynamic memory is constituted by connecting, e.g., 128 memory cells M0-M127, M128-M255 and two dummy cells DL1-DL2, DR1-DR2 to left and right bit lines LPL, RBL respectively. When left side word lines WL0- WL127 are selected to a sense circuit 5, dummy word lines RDW1 and LDW2 are selected, and when right side word lines WL128-WL255 are selected, dummy word lines LDW1 and RDW2 are selected. Since the dummy cell of the selected word line side is driven, the capacity 1.5 of opposite side is satisfactory to the added capacity 2. |
