发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To reduce noise due to stray capacity, by providing a conductor plane pattern for the lower layer of a bubble magnetic domain detector via an isolation layer. CONSTITUTION:In a magnetic bubble memory element forming a bubble stretcher 10 arranged with a number of chevron pattern 11 and a bubble magnetic domain detector 12 of serpentine type on a magnetic thin film of one axis anisotropy formed on a non-magnetic substrate, a conductor plane pattern 13 is formed on the lower layer of a bubble magnetic domain detector 12 via an isolating layer. The conductor pattern 13 is formed on the entire surface enclosing the detector. Since the conductor pattern 13 acts as a grounding layer, the noise due to stray capacity is reduced, and the layer constitution of a detector is thicken with the conductor pattern 13, the bias margin is improved.
申请公布号 JPS5782274(A) 申请公布日期 1982.05.22
申请号 JP19800158120 申请日期 1980.11.12
申请人 FUJITSU KK 发明人 INOUE HIROSHI;YANASE TAKEYASU;IWASA SEIICHI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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