| 摘要 |
<p>1322511 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 9 Sept 1970 [12 Sept 1969] 43149/70 Heading H1K The N-type source zone 34 of an IGFET is electrically connected to the P-type substrate region 33 of the device both at the lower surface of the substrate, e.g. via an A1 wire 50 and Au-plated Fe-Ni-Co alloy base plate 44, and at its upper surface, by a metal layer 41, e.g. of Al. The device may have two gate electrodes 37, 48, which, with the source electrode 41 and drain electrode 39, define a complex interdigitated configuration of A1 layers (Fig. 2, not shown). The A1 wire 50 may be replaced by a vapour deposited metal strip overlying an insulating layer on the semi-conductor substrate 33. The base plate 44 may be soldered to the substrate 33 by a layer 43 of Au. To improve the contact between the layer 41 and the substrate region 33 a P+ diffusion may be carried out adjacent the shorted source-substrate junction 42. The substrate 33 may be of Si, Ge or a III-V compound, while the insulation 66 may be of silicon oxide, silicon nitride and/or aluminium oxide.</p> |
