发明名称 |
Si{hd 3{b N{HD 4 {B formed by nitridation of sintered silicon compact containing boron |
摘要 |
A polycrystalline silicon nitride body is produced by shaping a particulate mixture of silicon powder and boron into a green body, sintering the body to a density ranging from 60% to 75% of the theoretical density of silicon, said sintered body having pores which are interconnecting and open to the surface of the body, and reacting said sintered body with gaseous nitrogen to convert it to silicon nitride.
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申请公布号 |
US4017319(A) |
申请公布日期 |
1977.04.12 |
申请号 |
US19760646967 |
申请日期 |
1976.01.06 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
GRESKOVICH, CHARLES D.;PROCHAZKA, SVANTE |
分类号 |
C04B35/591;(IPC1-7):C04B35/70;C04B35/58;F27B9/10 |
主分类号 |
C04B35/591 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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