发明名称 |
PHOTOSENSITIVE SEMICONDUCTOR DEVICE |
摘要 |
A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment. |
申请公布号 |
AU8535675(A) |
申请公布日期 |
1977.04.07 |
申请号 |
AU19750085356 |
申请日期 |
1975.10.01 |
申请人 |
SONY CORP. |
发明人 |
TAKAYOSHI MAMINE;TAKESHI MATSUSHITA |
分类号 |
G02B1/11;H01L21/314;H01L31/02;H01L31/0216;H01L31/04;H01L31/10 |
主分类号 |
G02B1/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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