发明名称 PHOTOSENSITIVE SEMICONDUCTOR DEVICE
摘要 A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.
申请公布号 AU8535675(A) 申请公布日期 1977.04.07
申请号 AU19750085356 申请日期 1975.10.01
申请人 SONY CORP. 发明人 TAKAYOSHI MAMINE;TAKESHI MATSUSHITA
分类号 G02B1/11;H01L21/314;H01L31/02;H01L31/0216;H01L31/04;H01L31/10 主分类号 G02B1/11
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