| 摘要 |
<p>1527804 Integrated circuits NCR CORP 23 Sept 1976 [1 Oct 1975] 39502/76 Heading H1K In a method of making an integrated circuit, in particular a diode matrix, two intersecting sets of parallel insulating regions are formed in a semi-conductor layer 14 provided in a substrate 12 of a conductivity type opposite to that of the layer, one of the sets extending only partially through the layer whereas the other extending completely through the layer such that interconnection between portions of the layer below the shallow insulating regions persists; and circuit components are formed in and/or on the isolated areas. Using photo-resist layers (18, 24), Figs. 1A, 3A (not shown), and a silicon nitride layer (16) as etching masks, the two sets of perpendicular grooves are formed in N-epitaxial silicon layer in two etching steps. The insulating material in the grooves is grown by oxidation of silicon in steam using silicon nitride as a mask, and this is followed by diffusion of boron from boron tribromide gas in the epitaxial layer to form diodes in the isolated areas. Metal contacts 42, Fig. 9A, in the diffused P-regions of the diodes are provided by sputter deposition through openings in an oxide passivating layer 30.1. P regions of the diodes in rows 1, 2, 3 are interconnected by conductive lead lines 42.1.</p> |
