| 发明名称 |
PROCEDE DE FABRICATION DE SEMI-CONDUCTEURS PAR DIFFUSION DE GALLIUM DANS UN TUBE OUVERT, |
| 摘要 |
A process for diffusing gallium into a semiconductor material is disclosed in which a gaseous mixture of argon and carbon monoxide is used to transport the gallium in an open tube diffusion furnace to the semiconductor material contained in the tube where the gallium diffusion takes place. |
| 申请公布号 |
BE847005(A1) |
申请公布日期 |
1977.04.06 |
| 申请号 |
BE19760171292 |
申请日期 |
1976.10.06 |
| 申请人 |
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发明人 |
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| 分类号 |
C30B31/06;C30B31/08;C30B31/16;H01L21/22;(IPC1-7):H01L/ |
主分类号 |
C30B31/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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