Edge profile control during patterning of silicon by dry etching with CCl4-O2 mixtures

摘要

The edge profile of a silicon layer is shaped to have a gradual incline considerably less than 90 DEG by continuously reducing the amount of oxygen mixed with carbon tetrachloride in a reactive ion etching environment. The etching mode varies from complete isotropic etching when the amount of oxygen is maximum, to complete anisotropic etching when the oxygen content is zero.