发明名称 High rate ion plating source
摘要 A high rate material vaporizing and ion generating source for controled environment high rate ion plating in providing high particulate energy level deposited film build ups. An externally shielded work coil surrounding the ion material source and fed by an alternating RF frequency power source inductively couples energy to an inductive magnetic field variation responsive material crucible. The crucible is advantageously positioned at the effective center of the coil within a tubular refractory heat shield, also positioned within the turns of the coil, that allows energy to enter the crucible, but heat shield retards radiant heat loss from the crucible region. Atoms of evaporant material, from the material being heated and vaporized in the crucible, pass through the RF energy-created magnetic field in its densest area, axially extended through the center of the oil, with magnetic field lines being generally toroidal, other than as modified by external shielding, outside of the coil winding turns, that floats from all voltage and ground. The ion material plating source provides both vaporizing of the plating material from the crucible and ionization of evaporant material atoms for sustained high rate, high particulate energy level ion plating deposition of plating material, with the ionization occurring primarily in the gas plasma generated with energy input for the ion plating process. Arcing damage to the work coil, of the various embodiments, is prevented by conductive attachment of a reference potential to the work coil itself that allows the device to operate throughout a pressure range from ultra high vacuum to greater than atmospheric pressure.
申请公布号 US4016389(A) 申请公布日期 1977.04.05
申请号 US19750551703 申请日期 1975.02.21
申请人 WHITE, GERALD W. 发明人 WHITE, GERALD W.
分类号 C23C14/32;H05B6/36;(IPC1-7):H05B5/18 主分类号 C23C14/32
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