| 摘要 |
A semiconductor composite having a rectifying characteristic is provided by first forming an insulating film of a semiconductor compound such as SiO2 on a semiconductor substrate of N-type Si to a uniform thickness of 27A to 500A, for example, and then further depositing thereon a tin oxide film. The intermediate insulating film between the SnO2 film and the semiconductor substrate decreases the reverse leakage current, raises the reverse breakdown voltage and makes uniform the reverse breakdown voltage. The semiconductor composite of the present invention, as subjected to a predetermined value of light energy, shows an excellent switching characteristic with respect to a voltage applied to the composite in a reverse direction. Also the semiconductor composite of the present invention, as supplied with a certain value of reverse bias voltage or with no bias, shows an excellent switching characteristic with respect to light energy applied to the composite.
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