| 发明名称 |
Method of developing and stripping positive photoresist |
| 摘要 |
Baked novolak resin based positive photoresists are either developed after exposure or stripped, following the use of the pattern resist layer as an etch mask, in aqueous solutions of a combination of permanganate and phosphoric acid.
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| 申请公布号 |
US4015986(A) |
申请公布日期 |
1977.04.05 |
| 申请号 |
US19750607000 |
申请日期 |
1975.08.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PAAL, GABOR;WUSTENHAGEN, JURGEN F. |
| 分类号 |
G03F7/32;G03F7/039;G03F7/30;G03F7/42;H01L21/027;H01L21/30;H05K3/06;(IPC1-7):G03C5/00;G03F7/08 |
主分类号 |
G03F7/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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