| 发明名称 |
SEMICONDUCTOR DEVICE FOR PROTECTION OF OVERVOLTAGE |
| 摘要 |
PURPOSE:A high impurity concentration region of the same conductivity type as a substrate is formed across the substrate immediate beneath gate controlling electrode and a region of opposite conductivity type formed on this substrate, whereby breakdown voltage in the reverse direction is diminished and surge voltage resistance is improved. |
| 申请公布号 |
JPS5243377(A) |
申请公布日期 |
1977.04.05 |
| 申请号 |
JP19750119616 |
申请日期 |
1975.10.02 |
| 申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
TOYODA EIJIROU |
| 分类号 |
H02H9/04;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L29/66;H01L29/78;H03F1/42;H03F1/52 |
主分类号 |
H02H9/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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