发明名称 |
Method for fabricating a silicon device utilizing ion-implantation and selective oxidation |
摘要 |
A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon substrate. Nitrogen ions are implanted in the outer surface of the polycrystalline silicon layer and the exposed surface of the oxide film. The whole surfaces are oxidized by wet oxidation so as to form a thick oxide layer at the surface of the oxide film which is not covered by the polycrystalline silicon layer.
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申请公布号 |
US4016007(A) |
申请公布日期 |
1977.04.05 |
申请号 |
US19760658065 |
申请日期 |
1976.02.13 |
申请人 |
HITACHI, LTD. |
发明人 |
WADA, YASUO;USUI, HIROO;KOYANAGI, MITSUMASA;ASHIKAWA, MIKIO |
分类号 |
H01L21/76;H01L21/00;H01L21/316;H01L21/32;H01L21/321;H01L21/762;H01L29/00;(IPC1-7):H01L21/76;H01L21/26 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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