| 发明名称 |
METALLSEMICONDUCTOR CONTACT TYPE SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF |
| 摘要 |
PURPOSE:To form a semiinsulating layer in a desired manner along the side faces of a mesa type semiconductor layer thereb reducing junction capacitance and series resistance between Schottky barrier and electrode. |
| 申请公布号 |
JPS5242077(A) |
申请公布日期 |
1977.04.01 |
| 申请号 |
JP19750117529 |
申请日期 |
1975.09.29 |
| 申请人 |
SONY CORP |
发明人 |
SUZUKI KUNIZOU |
| 分类号 |
H01L29/872;H01L21/265;H01L29/47 |
主分类号 |
H01L29/872 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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