| 发明名称 |
SEMICONDUCTOR LIGHT EMISSION DEVICE |
| 摘要 |
<p>PURPOSE:A mixed crystal clad layer of AlGalnAs is formed on both sides of an active layer composed of GalnAs or AlGalnAs mixed crysta, whereby energy gap is controlled to the finest vlaue and good light closing is made possible.</p> |
| 申请公布号 |
JPS5242389(A) |
申请公布日期 |
1977.04.01 |
| 申请号 |
JP19750118535 |
申请日期 |
1975.09.30 |
| 申请人 |
FUJITSU LTD |
发明人 |
NAKAJIMA KAZUO;AKITA KENZOU;KOTANI TAKESHI |
| 分类号 |
H01L21/208;H01L33/16;H01L33/30;H01S5/00;H01S5/042 |
主分类号 |
H01L21/208 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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