发明名称 |
Schottky barrier thin film semiconductor - for solar cells, produced by ionized agglomerate vapour deposition |
摘要 |
<p>A substrate has on its surface a monocrystalline semiconductor thin film, such as a film of p- or n-type silicon. deposited from the vapour at 10-2 to several Torr press. after heating to a high temp. Injector nozzle spray the vapour into a vacuum chamber which is held at under 1/100th of the above press. Atom agglomerates, produced by supercooling are ionized by a thermion emission wire. A battery produces an accelerating electric field for the atoms to impinge on the substrate surface. This results in semiconductor devices of high quality and yield. It has a low weight, is easily handled and partic suitable for use in solar battery cells.</p> |
申请公布号 |
DE2631880(A1) |
申请公布日期 |
1977.03.31 |
申请号 |
DE19762631880 |
申请日期 |
1976.07.15 |
申请人 |
FUTABA DENSHI KOGYO K.K. |
发明人 |
MORIMOTO,KIYOSHI;UTAMURA,YUKIHIKO;MOBARA,CHIBA;TAKAGI,TOSHINORI |
分类号 |
C23C14/22;H01L21/203;H01L29/04;H01L31/07;H01L31/18;(IPC1-7):H01L31/06;H01L21/20 |
主分类号 |
C23C14/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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