| 摘要 |
1469081 Charge-coupled devices COMMISSARIAT A L'ENERGIE ATOMIQUE 2 Jan 1975 [4 Jan 1974] 73/75 Heading H1K In the manufacture of a charge-coupled device self-aligned surface regions 24, 26 are ion implanted into the semi-conductor substrate using as masking alternate thick and thin portions 16, 18 of the insulating layer. In the singlephase-control Si device shown the regions 24, 26 are of opposite conductivity type to the substrate and are implanted after deposition of the spaced A1 electrodes 20, through the thinner portions 18 of a SiO 2 layer, whether or not the portions 18 are covered by A1. This requires the Al to be very thin, but in a modification in which this is not necessary the implanted regions 26 are only formed beneath uncovered thinner oxide portions 18 (see Fig. 1d 2 , not shown). An overall surface layer of opposite type to the substrate is preferably implanted before any other processing step. In another single-phase embodiment the metal electrodes are deposited after implantation of the regions 24, 26, and in a further one-phase modification the electrodes (50), Fig. 4 (not shown), are formed before implantation of the self-aligned regions (56) but cover only part of each insulating step, implantation taking place through the uncovered areas of the thinner oxide portions. In this case the implanted regions are of the same type as the substrate. Two-phase-control embodiments in which alternate electrodes are connected to different control lines are described, the major difference as compared with the one-phase arrangements being that every pair of steps of insulating layer, rather than every second pair, is covered by electrodes.
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