| 发明名称 |
INSULATION GATE TYPE FIELD EFFECT TRANSISTOR CIRCUIT |
| 摘要 |
PURPOSE:A protection diode is built between gate and source electrodes or between drain and source electrodes, whereby an IGFET which prevents breakdown of junction is obtained. |
| 申请公布号 |
JPS5240981(A) |
申请公布日期 |
1977.03.30 |
| 申请号 |
JP19750115974 |
申请日期 |
1975.09.27 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
KITAOKA TSUYOSHI |
| 分类号 |
H03F1/52;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L29/66;H01L29/78;H01L29/866;H03F1/42 |
主分类号 |
H03F1/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
