| 摘要 |
PURPOSE:To avoid the strength drop by diffusion even if it is let alone underhigh temperature and to improve bonding properties by providing at least an Ni metallic layer by electroless Ni plating. CONSTITUTION:A circuit is made of an SiO2 oxide film 3, an A1 wiring 2, etc., on a semiconductor element 1, and to take connection to the outside of the semiconductor element, the other part is covered with passivation 4. It is soaked in electroless Ni plating solution on the market so as to form an Ni metallic layer 5 on the exposed A1 pad 2. And a very small amount of irregularity is formed on the surface of the electroless Ni plating. |
