| 摘要 |
A semiconductor switch large in dv/dt bearing capacity regardless of the anode or cathode potential, high in breakdown voltage, capable of being closed with a small control current, and easy to be included in semiconductor integrated circuits. The semiconductor switch according to the invention comprises a PNPN switch having an equivalent PNPN four-layer construction with three junctions and an active circuit network including at least one transistor. The active circuit network combines with part of a positive feedback loop in the PNPN switch to form a negative feedback circuit network. The transistor forming part of the active circuit network is connected in such a manner as to divide one of the gate currents of the PNPN switch.
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