| 摘要 |
PURPOSE:To control each nozzle individually and to easily control a selective epitaxial growth layer having excellent uniformity and controllability by a method wherein the first gas and the second gas are made to flow into a reaction furnace atmosphere using the independently provided nozzles. CONSTITUTION:When a selective epitaxial growth method is performed, the first gas having the property suitable for formation of a vapor growth film such as SiH4 gas, SiH2Cl gas and the like, and the second gas having the property suitable to perform etching on the vapor growth film, are fed into the atmosphere of the reaction furnace 1 of a vapor growth device. The epitaxial growth layer, which is formed by having well-balanced flow rate, distribution and the like of gas, can be securely controlled by independently providing the first nozzle 3 and the second nozzle 4 and by controlling these nozzles independently. By securely controlling the epitaxial growth as above-mentioned, the vapor growth film on a wafer can be formed uniformly, and the characteristics and the reproducibility of the element can be improved.
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