Discrete, fixed-value capacitor

摘要

An axial-lead fixed-value capacitor comprising a metal-nitride-oxide-silicon chip in a standard diode package has been fabricated, having capacitance values in the 10 to 1000 pico-farad range. The device features a beveled-edge configuration which contributes to a low leakage current and also facilitates the sealing of the semiconductor chip in a double plug axial-lead package. The double layer dielectric medium comprises a thermally grown silicon oxide film typically 450 angstroms thick, for example, and a plasma deposited layer of silicon nitride typically 350 angstroms thick, for example.