IMPLANTATION OF IONS INTO A METAL ELECTRODE

摘要

Silicon ions are implanted in an aluminum or aluminum-copper film forming an electrode layer over a silicon dioxide layer on a semiconductor. The per cent by weight of silicon implanted into the metal film is greater than the per cent by weight of solid solubility of silicon in aluminum at the maximum processing temperature of the substrate that occurs after implantation. The peak of the implanted ion profile is preferably at the interface between the film and a silicon dioxide layer on the surface of the substrate.