| 发明名称 |
ELECTRODE STRUCTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To improve reliability for the shallow PN junction and to avoid deterioration in characteristics of schottky junction by making electrode duallayered structure of pure Al-Si alloy of specified thickness. |
| 申请公布号 |
JPS5239372(A) |
申请公布日期 |
1977.03.26 |
| 申请号 |
JP19750114783 |
申请日期 |
1975.09.25 |
| 申请人 |
HITACHI LTD |
发明人 |
KIKUCHI AKIRA;IKEDA TAKAHIDE;SUZUKI MICHIO |
| 分类号 |
H01L29/43;H01L21/28;H01L29/47;H01L29/872 |
主分类号 |
H01L29/43 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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