| 发明名称 |
PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To form MOSFET region accurately by controlling condition of film thickness and that of diffusion by using two kinds of oxidizing films where impurities of different diffusion coefficients are added. |
| 申请公布号 |
JPS5239379(A) |
申请公布日期 |
1977.03.26 |
| 申请号 |
JP19750115750 |
申请日期 |
1975.09.25 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
KIRITA KEI;MORIYA TAKAHIKO |
| 分类号 |
H01L27/088;H01L21/22;H01L21/225;H01L21/3205;H01L21/8234;H01L21/8247;H01L21/84;H01L23/52;H01L27/12;H01L29/78;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L27/088 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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