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发明名称
FORMATION OF DEFECTIVE LAYER IN SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPS6412537(A)
申请公布日期
1989.01.17
申请号
JP19870167907
申请日期
1987.07.07
申请人
NEC CORP
发明人
TOYODA ARATA
分类号
H01L21/322
主分类号
H01L21/322
代理机构
代理人
主权项
地址
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