发明名称 Ion sputtering vacuum deposition chamber - with pairs of cathodes and anode in specified planar and spatial arrangement
摘要 <p>Layers of materials are deposited by ion sputtering in a vacuum discharge chamber with at least two pairs of cathodes which are at equal distances to the geometrical centres of plane sputtering surfaces of each pair and in parallel planes. Each cathode pair has its own anode, equidistant from the cathodes of each pair. All anodes lie in the same plane and the workpiece is located at a point where the beams of all the sputtered material from the cathodes converge and overlap.</p>
申请公布号 DE2541719(A1) 申请公布日期 1977.03.24
申请号 DE19752541719 申请日期 1975.09.18
申请人 GOLJANOW,WJATSCHESLAW MICHAJLOWITSCH;DEMIDOW,ALEK PLATONOWITSCH 发明人 MICHAJLOWITSCH GOLJANOW,WJATSCHESLAW;PLATONOWITSCH DEMIDOW,ALEK
分类号 C23C14/35;(IPC1-7):23C15/00 主分类号 C23C14/35
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