| 发明名称 |
Process for eliminating undesirable charge centers in MIS devices |
| 摘要 |
The electrical properties of MIS semiconductor devices, which have been damaged by radiation, are restored by treating the devices in a properly oriented RF field at low pressure.
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| 申请公布号 |
US4013485(A) |
申请公布日期 |
1977.03.22 |
| 申请号 |
US19760681368 |
申请日期 |
1976.04.29 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MA, TSO-PING;MA, WILLIAM HSIOH-LIEN |
| 分类号 |
H01L21/324;H01L21/265;H01L21/326;H01L21/336;H01L21/8247;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/324 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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