发明名称 MEMORY DEVICE
摘要 <p>PURPOSE:To simplify a circuit by operating a memory device with suitable switching refresh operation and data transferring operation between a memory cell array and a register in a prescribed refresh cycle. CONSTITUTION:In the cycle that an inverting column address strobe CAS signal goes to be a low level in a time limit, with which a first inverting low address strobe RAS signal falls, after the falling edge of an inverting VSYNC signal is detected, an arbitrating circuit 112 generates a control signal for data transferring to a timing generator 111. Here, each time the control signal for data transferring is received, a data transferring counter 102 alternatively outputs control signals TGL and TGU to open respective data transferring gates which are divided into two. Then, the data transferring between a memory cell array part 106 and a register 109, which is provided corresponding to a bit line, is executed with being divided into two in a word line direction.</p>
申请公布号 JPH01258296(A) 申请公布日期 1989.10.16
申请号 JP19880086417 申请日期 1988.04.07
申请人 NEC CORP 发明人 HOSHINO YASUAKI
分类号 G11C11/401;G06F15/16;G06F15/167;G11C11/34;G11C11/406 主分类号 G11C11/401
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