发明名称 |
Stencil process for high resolution pattern replication |
摘要 |
A method and apparatus for the replication of thin film patterns. A stencil is fabricated of a material such as silicon by etching or epitaxially growing on the silicon wafer. The stencil is used as a shadow mask in molecular beam deposition of the thin film pattern. The technique provides high yields in the formation of relatively large scale thin film patterns.
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申请公布号 |
US4013502(A) |
申请公布日期 |
1977.03.22 |
申请号 |
US19730370897 |
申请日期 |
1973.06.18 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
STAPLES, EDWARD J. |
分类号 |
H01L21/306;C23C14/04;C30B23/04;G03F1/16;H01L21/00;H01L21/84;(IPC1-7):C23C13/08 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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