发明名称 Stencil process for high resolution pattern replication
摘要 A method and apparatus for the replication of thin film patterns. A stencil is fabricated of a material such as silicon by etching or epitaxially growing on the silicon wafer. The stencil is used as a shadow mask in molecular beam deposition of the thin film pattern. The technique provides high yields in the formation of relatively large scale thin film patterns.
申请公布号 US4013502(A) 申请公布日期 1977.03.22
申请号 US19730370897 申请日期 1973.06.18
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 STAPLES, EDWARD J.
分类号 H01L21/306;C23C14/04;C30B23/04;G03F1/16;H01L21/00;H01L21/84;(IPC1-7):C23C13/08 主分类号 H01L21/306
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